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MJD112G
MJD112G

  • MJD112G
  • MJD112G

MJD112G

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USD 0.61
Part NumberMJD112G
ManufacturerON Semiconductor
DescriptionTRANS NPN DARL 100V 2A DPAK
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Quantity Available1,528
DatasheetMJD112G
Minimum Order: $100 USD
Request for Quote to us through Email or Phone call on quanitities greater than those displayed or for price adjustment.
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Product Details

Part NumberMJD112G
ManufacturerON Semiconductor
DescriptionTRANS NPN DARL 100V 2A DPAK
Lead Free Status / RoHS StatusLead free / RoHS Compliant
CategoryDiscrete Semiconductor Products
Series-
FamilyTransistors (BJT) - Single
Standard Package75
PackagingTube
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20μA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75W
Frequency - Transition25MHz
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK-3
Online Catalog NPN Transistors
Other NamesMJD112G-ND MJD112GOS

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